2020春季课程-电子线路基础（高源）(天津中德应用技术大学)1455456161 中国大学MOOC答案100分完整版

股刃鼻荆凌防枚详梯逻驰祷慑

Chapter1SEMICONDUCTORDIODES

第一章测验

1、单选题：
‍A p-n junction is forward biased when ____. ‎‍‎

A: the applied potential causes the n-type material to be more positive than the p-type material
B: the applied potential causes the n-type material to be more negative than the p-type material
C: both materials are at the same potential
D: None of these
答案: the applied potential causes the n-type material to be more negative than the p-type material

2、单选题：
A p-n junction is reverse biased when _______.‏‏

A: the applied potential causes the n-type material to be more positive than the p-type material
B: the applied potential causes the n-type material to be more negative than the p-type material
C: the current flow across the junction is based on minority carrier transfer
D: All of the above
答案: the applied potential causes the n-type material to be more positive than the p-type material

3、单选题：
‏The diffusion capacitance of a diode is a shunt capacitance effect that occurs when the diode ___.‍‏‍

A: is large
B: is small
C: is forward biased
D: is reverse biased
答案: is forward biased

4、单选题：
The transition capacitance of a diode is a shunt capacitive effect that occurs when the diode _____. ‎‎

A: is large
B: is small
C: is forward-biased
D: is reverse-biased
答案: is reverse-biased

5、单选题：
‎The reverse saturation current of a diode will just about ___ for every 10°C rise in the diode temperature.‏‎‏

A: double
B: half
C: increase proportionately with temperature
D: decrease proportionately with temperature
答案: double

6、单选题：
‎Increasing the temperature of a forward-biased diode ______.‍‎‍

A: causes forward current to increase
B: causes forward current to decrease
C: has no significant effect on the forward current
D: None of these
答案: causes forward current to increase

7、单选题：
‌Some of the modern ohmmeters have a diode test setting. If you do not have one of these ohmmeters then to test the diode you need to check its resistance in the forward and the reverse direction. These resistances should be ____. ‏‌‏

A: relatively high in the forward direction and relatively low in the reverse direction
B: relatively low in the forward direction and relatively low in the reverse direction
C: relatively low in the forward direction and relatively high in the reverse direction
D: relatively high in the forward direction and relatively high in the reverse direction
答案: relatively low in the forward direction and relatively high in the reverse direction

8、单选题：
‏In the Zener region the current ________ and the voltage across the diode ____‍‏‍

A: is almost constant; can increase a lot
B: is almost constant; is almost constant
C: can increase a lot; is almost constant
D: can increase a lot; can increase a lot
答案: can increase a lot; is almost constant

9、单选题：
‎The ___ diode is a short circuit for the region of conduction and it is an open circuit in the region of nonconduction.‏‎‏

A: ideal
B: typical
C: power
D: small-signal
答案: ideal

10、单选题：
The ideal diode symbol has an arrow that points in the direction of _____.

A: the leakage current flow
B: the forward current flow
C: positive terminal under forward bias
D: All of the above
答案: the forward current flow

11、单选题：
As the device temperature increases, semiconductor materials tend to have ______‎‎

A: an increasing number of free electrons
B: a decreasing number of free electrons
C: lower conduction levels
D: relatively unchanged conduction conduction levels
答案: an increasing number of free electrons

12、单选题：
‍ Doping is used to ____‏‍‏

A: decrease the conductivity of an intrinsic semiconductor
B: increase the conductivity of an intrinsic semiconductor
C: stabilize the conductivity of an intrinsic semiconductor
D: increase the insulative quality of an intrinsic semiconductor
答案: increase the conductivity of an intrinsic semiconductor

13、单选题：
‎When a p-n junction’s depletion layer is narrowed and the device acts as a nearly perfect conductor, it is ______.‌‎‌

A: forward-biased
B: reverse-biased
C: unbiased
D: None of the above
答案: forward-biased

14、单选题：
‎When a p-n junction is reverse-biased, the depletion layer is ________ and the device acts as a near-perfect ______.‎‎‎

A: narrowed; conductor
B: narrowed; insulator
C: widened; conductor
D: widened; insulator
答案: widened; insulator

15、单选题：
‏The electrode with n-type material of a diode is called the _____‏

A: anode
B: cathode
C: depletion region
D: Zener region
答案: cathode

16、单选题：
‎Silicon diodes have been more significantly developed than germanium because ___‎‎‎

A: it is cheaper
B: it is easier to produce
C: it is more tolerant of heat
D: it has a lower forward voltage drop
答案: it is cheaper

17、单选题：
Pentavalent atoms are often referred to as _____‍‍

A: donor atoms
B: minority carriers
C: acceptor atoms
D: majority carriers
答案: donor atoms

18、单选题：
‎The electrode with p-type material of a diode is called the ____‍‎‍

A: anode
B: cathode
C: depletion region
D: Zener region
答案: anode

19、单选题：
‏When tested with an ohmmeter, a diode should have a relatively high resistance for _____ condition. ‌‏‌

A: the reverse-biased
B: the forward-biased
C: both reverse and forward-biased
D: zero-biased
答案: the reverse-biased

20、单选题：
‏When tested with an ohmmeter, a diode should have a relatively small resistance for ____ condition‍‏‍

A: the reverse-biased
B: the forward-biased
C: both reverse- and forward-biased
D: zero-biased
答案: the forward-biased

21、单选题：
‎The act of giving off light by applying an electrical source of energy is called _____‍‎‍

A: light power
B: laser
C: photons
D: electroluminescence
答案: electroluminescence

22、判断题：
‎Electrons are the minority carriers in an n-type material.‏‎‏

A: 正确
B: 错误
答案: 错误

23、判断题：
Holes are the majority carriers in a p-type material.

A: 正确
B: 错误
答案: 正确

Chapter2.DIODEAPPLICATIONS

第二章测验

1、单选题：
‏What is the value of the voltage dropped across forward-biased silicon diodes that are connected in parallel with each other? ____‏‏‏‏‏

A: 11.3 V
B: 0.3 5 V
C: 0.7 V
D: 1.4 V
答案: 0.7 V

2、单选题：

The resistor voltage and resistor current in this circuit are ____

A: 10 V, 5 mA
B: 11 V, 2 mA
C: 11 V, 11 mA
D: 2 V, 11 mA
答案: 11 V, 11 mA

3、单选题：
‏Which of the following circuits is used to eliminate a portion of a signal? ____‎‏‎

A: Clipper
B: Damper
C: Voltage multiplier
D: Voltage divider
答案: Clipper

4、单选题：

‎The circuit shown here is a ____.

‏

‎

‏
A: series clipper
B: parallel clipper
C: series clamper
D: shunt clamper
答案: parallel clipper

5、单选题：
‏The Zener diode must be operated such that ___.‍‏‍

A: IZ × VZ = PZ
B: PZ is less than the specified PZmax
C: the applied voltage is greater than VZ
D: All of these
答案: All of these

6、单选题：
If one silicon diode and one germanium diode are connected in series, the voltage drop across the combination of the two diodes will be equal to ______. ‏‏

A: the forward drop equal to that of the silicon diode
B: the forward drop equal to that of the germanium diode
C: the forward drop equal to that of the sum of the voltage drops across the two diodes
D: the forward drop equal to that of the difference of the voltage drops across the two diodes
答案: the forward drop equal to that of the sum of the voltage drops across the two diodes

7、单选题：

Name the logic gate that is formed by this circuit. ______

‍

‍
A: positive logic OR gate
B: positive logic AND gate
C: negative logic OR gate
D: negative logic AND gate
答案: positive logic OR gate

8、单选题：

‏The current flows through the load resistor in this circuit during the ____.

‏

A: positive half cycle of the input waveform
B: negative half cycle of the input waveform
C: entire input waveform
D: The diode will block all current and there will be no current flowing through the load.
答案: positive half cycle of the input waveform

9、单选题：

‎Calculate the peak current that will flow through this circuit, assuming an ideal diode. ______

‍

‎

‍
A: 12 mA during the positive half cycle
B: 12 mA during the negative half cycle
C: 16.97 mA during the positive half cycle
D: 16.97 mA during the negative half cycle
答案: 16.97 mA during the negative half cycle

10、单选题：

‏For this clipping circuit, what will be the maximum output voltage when the diode is conducting? ______.

‎

‏

‎
A: + 16.97 Volts
B: – 16.97 Volts
C: + 2.5 Volts
D: + 19.47 Volts
答案: + 2.5 Volts

11、单选题：

‏What is the minimum output voltage for this clipping circuit when the diode is not conducting? ______.

‌

‏

‌
A: – 16.97 V
B: + 16.97 V
C: 0 V
D: – 17.97 V
答案: 0 V

12、单选题：
‍Two silicon regulators, uz1 = 6V, uz2 = 9V, which of the following voltage is not the voltage obtained by the two phases in series.

A: 15V
B: 6.7V
C: 9.7V
D: 3V
答案: 3V

13、单选题：

The stable voltage of Zener diode is， D1 6V and D2 8V respectively, as shown in the figure below, what is the output voltage?

‏

‎

‏
A: 8.7V
B: 6.7V
C: 3V
D: 20V
答案: 8.7V

14、单选题：
‎The zener diode works in the ____ ____ area. When the zener diode works, the current limiting resistor must be added。‏

A: reverse breakdown
B: Forward conduction
C: Variable resistance
D: the diode is burned
答案: reverse breakdown

Chapter3.BIPOLARJUNCTIONTRANSISTORS

第三章测验

1、单选题：
‏In the active region, the base-emitter junction ____.‌‏‌

A: and the base-collector junctions are both forward-biased
B: and the base-collector junctions are both reverse-biased
C: is forward-biased while the base-collector junction is reversed-biased
D: is reverse-biased while the base-collector junction is forward-biased
答案: is forward-biased while the base-collector junction is reversed-biased

2、单选题：
‎A BJT has measured dc current values of IB = 0.1 mA and IC = 8.0 mA. When IB is varied by 100 μA, IC changes by 10 mA. What is the value of the βac for this device?____‎‎‎

A: 80
B: 10
C: 100
D: 800
答案: 100

3、单选题：
When a BJT is operating in the active region, the voltage drop from the base to the emitter VBE is approximately equal to the____‏‏

A: base bias voltage
B: base current times the base resistor
C: diode drop (about 0.7 V)
D: emitter voltage
答案: diode drop (about 0.7 V)

4、单选题：
‍BJTs are commonly used as _____‍

A: the primary components in amplifiers
B: series damper circuits
C: the primary components in rectifiers
D: All of the above
答案: the primary components in amplifiers

5、单选题：
‎The condition where increase in bias current will not cause further increases in collector current is called ___.‎‎‎

A: cutoff
B: saturation
C: active operation
D: All of the above
答案: saturation

6、单选题：

‎This is the symbol for a ____

‍

‎

‍
A: npn-type BJT
B: pnp-type BJT
C: pnn-type BJT
D: ppn-type BJT
答案: npn-type BJT

7、单选题：

Identify the terminals on this BJT.____

‌

‌
A: 1 = base, 2 = emitter, 3= collector
B: 1 = emitter, 2 = collector, 3 = base
C: 1 = collector, 2 = base, 3 = emitter
D: 1 = collector, 2 = emitter, 3 = base
答案: 1 = collector, 2 = emitter, 3 = base

8、单选题：
For basic operation of a transistor the base-emitter junction is ____ biased.

A: forward-
B: reverse-
C: not
D: semi-
答案: forward-

9、单选题：
‏For basic operation of a transistor the collector-base junction is _______ biased.‏

A: forward-
B: reverse-
C: not
D: semi-
答案: reverse-

10、单选题：

‎Which of the following is true for this BJT circuit?_______

‍

‎

‍
A: The base-emitter and collector-base junctions are both forward-biased.
B: The base-emitter junction is forward-biased and the collector-base junction is reversed-biased.
C: The base-emitter junction is reverse-biased and the collector-base junction is forward-biased.
D: The base-emitter and collector-base junctions are both reverse-biased.
答案: The base-emitter junction is forward-biased and the collector-base junction is reversed-biased.

11、单选题：

‏Which of the following is true for this BJT circuit?_______

‎

‏

‎
A: The base-emitter and collector-base junctions are both forward-biased.
B: The base-emitter junction is forward-biased and the collector-base junction is reversed-biased.
C: The base-emitter junction is reverse-biased and the collector-base junction is forward-biased.
D: The base-emitter and collector-base junctions are both reverse-biased.
答案: The base-emitter junction is forward-biased and the collector-base junction is reversed-biased.

12、单选题：
‎In the saturation region, the base-emitter junction _____.‎‎‎

A: and the base-collector junctions are both forward-biased
B: and the base-collector junctions are both reverse-biased
C: is forward-biased while the base-collector junction is reversed-biased
D: is reversed-biased while the base-collector junction is forward-biased
答案: and the base-collector junctions are both forward-biased

13、单选题：
‍In the cut-off region, the base-emitter junction _____.‌‍‌

A: and the base-collector junctions are both forward-biased
B: and the base-collector junctions are both reverse-biased
C: is forward-biased while the base-collector junction is reverse-biased
D: is reversed-biased while the base-collector junction is forward-biased
答案: and the base-collector junctions are both reverse-biased

14、单选题：
‍The output or the collector characteristics for a common base transistor amplifier shows that as a first approximation the relation between IE and IC in the active region is given by _____. ‏‍‏

A: IE = IC
B: IE  >> IC
C: IE  << IC
D: IE  ≈ IC
答案:   IE  ≈ IC

15、单选题：
‍ In a small-signal transistor, the typical range of the parameter α is _____.‏‍‏

A: greater than 1
B: between 0 and 1
C: almost equal to 1 but always less than 1 (0.9 to 1.0)
D: almost equal to 1 but always greater than 1 (1.0 to 1.1)
答案: almost equal to 1 but always less than 1 (0.9 to 1.0)

16、单选题：
Which transistor amplifier configuration is the most commonly used?

A: common-emitter
B: common-collector
C: common-base
D: None of these are used more often than the others.
答案: common-emitter

17、单选题：
‍A BJT has measured dc current values of IB = 0.1 mA and IC = 8.0 mA. When IB is varied by 100 μA, IC changes by 10 mA. What is the value of the βdc for this device? ‏‍‏

A: 80
B: 10
C: 100
D: 800
答案: 80

18、单选题：
‏When a BJT is operating in the saturation region the voltage drop from the collector to the emitter VCE is approximately equal to _____.‏

A: the collector supply voltage
B: the collector current times the collector resistor
C: zero (about 0.3 Volts)
D: the emitter voltage
答案: zero (about 0.3 Volts)

19、单选题：
Why is the arrow on the BJT schematic symbol important? ‌‌

A: It identifies the emitter terminal and the type of BJT.
B: It identifies the collector terminal and the type of BJT.
C: It identifies the base terminal and the type of BJT.
D: None of the above
答案: It identifies the emitter terminal and the type of BJT.

20、单选题：
‏The common-base, short-circuit, amplification factor is better known as ______.‏‏‏

A: ac β
B: dc β
C: ac α
D: dc α
答案: ac α

21、单选题：
‎The common-emitter, forward-current, amplification factor is better known as ______.‍‎‍

A: ac β
B: dc β
C: ac α
D: dc α
答案: ac β

22、单选题：
‎Which of the following expressions is true? ‌‎‌

A: βdc =

B: βdc =

C: βdc = where VCB is constant

D: βdc = where VCE is constant

答案: βdc =