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密码保护：模拟电子技术基础（西安邮电大学）

寄膜旗苛品旗小瘸贤鞭卿搬模

这是一篇受密码保护的文章，您需要提供访问密码：

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帝回乖吕唤虎坝腊拨鹃隶老泻

发布于 2020年1月5日作者 gebilaowang分类 2020标签，Ω、.、.dB第十章单元测试、.mA、%、AbasebiasvoltageBbasecurrenttimesthebaseresistorCdiodedrop(about.V)Demittervoltage、abattery，asmallresistor，andtheidealdiode、ABJThasmeasureddccurrentvaluesof=.mAand=.mA.WhenIBisvariedbyμA，ICchangesbymA.Whatisthevalueoftheβacforthisdevice?（）.ABCD、AdBdropinβoccursat（）.ABCD、AJFETcanbebiasedinseveraldifferentways.Thecommonmethod(s)ofbiasingannchannelJFETis(are)（）.AselfbiasconfigurationBvoltagedividerbiasconfigurationCfixedbiasconfiguration、Allofthese第三章单元测试、Anactivefilterthatprovidesaconstantoutputforinputsignalsaboveiscalledanideal（）.AlowpassfilterBhighpassfilterCbandpassfilter、AnamplifierhasagainbandwidthproductofMHz.Afeedbacknetworkisaddedthathasafeedbackfactor(+βA)of..Whatisthegainbandwidthproductforthecircuitwiththeaddedfeedbacknetwork?（）A.MHzB.MHzCMHz、Anamplifierhasamidbandpowergainof，.WhatisthevalueofthepowergainindBforthecircuit?（）A.dBB.dBCdB、annchanneltypeapchanneltypeunipolarstructure、arelesssensitivetotemperaturechangethanBJTshaveahigherinputimpudencethanBJTsaresmallerinconstructionthanBJTs第七章单元测试、Asecondorderlowpassfilterhasahighendrolloffof（）.AdB/octaveBdB/decadeCdB/octaveDdB/decade、Asummingintegratorisanopampintegratorthathas（）.AmultiplefeedbackcapacitorsBmultipleinputresistorsCmultipleinputresistorsandfeedbackcapacitors、biasingthetransistorsslightlyabovecutoff、BJTsarecommonlyusedas（）.AtheprimarycomponentsinamplifiersBseriesdampercircuitsCtheprimarycomponentsinrectifiers、Calculatethecollectoremittervoltageforthisemitterstabilizedcircuit.（）AVB.VCVD.V、CalculatetheinputimpedanceforthisFETamplifier.（）ABCD=woulddependonthedraincurrent、CalculatethelowfrequencybreakpointduetothecapacitorforthisBJTamplifier.（）ABCD、Calculatethevoltagegainforthiscircuit.（）A.B.C.D.、CalculatethevoltagegainforvoltageseriesfeedbackwhentheamplifiergainisA=andF=/.（）AB/CD.、Clipper、commonbaseamplifier、commondrain、commongate第九章单元测试、commonsource、conductsthrough°oftheinputwaveform、CrossoverdistortioninclassBamplifiersispreventedby（）.AbiasingthetransistorsdeeplyintocutoffBbiasingthetransistorsslightlyabovecutoffCusingcomplementarysymmetrytransistorsDincreasingtheloadresistance、dB/decade、decrease、depletiontypeMOSFETscanhavepositivevaluesofandlevelsofthatexceed、Designthiscircuitforavoltagegainof.Youhavetocalculatethevalueofresistorand.Itisdesiredthatthetransistoroperatewitharelativelyhighvalueof.Forthisdevice，ahighvalueofisdefinedas.（）ABCD、differential、diodedrop(about.V)、drainfeedbackbias、emitter—basejunction、FETsusually（）.AarelesssensitivetotemperaturechangethanBJTsBhaveahigherinputimpudencethanBJTsCaresmallerinconstructionthanBJTs、ForannchanneldepletionMOSFET，=mAand=V.If=.V，whatisthevalueofthedraincurrent，?（）AmAB.μAC.mADmA、Generally，itisgooddesignpracticeforlinearamplifierstohaveoperatingpointsthatcloseto（）.AareclosetosaturationlevelBthecutoffregionCthemidpointoftheloadline、Giventhisconfiguration，determinetheinputimpedanceifVS=mV，Rsense=.kΩ，andtheinputcurrentisμA.（）AMΩBMΩC，ΩDkΩ、highpassfilter第十二章单元测试、high第二章单元测试、Iftheinputvoltageis.Vandtheoutputis.V，thevalueofmustbe（）.A.kΩB.kΩC.kΩDkΩ、inactive、independentofbeta第五章单元测试、inonedirectiononly、inputimpedancewithfeedbackkΩ、InthefamilyofFETs，youcanexpecttofind（）.AannchanneltypeBapchanneltypeCunipolarstructure、intherange.to.第六章单元测试、isforwardbiasedwhilethebasecollectorjunctionisreversedbiased、isincreasedwhencomparedto、kΩ、lead、MHz、multipleinputresistorsandfeedbackcapacitors、NegativedBvaluesrepresent（）.ApowergainBpowerlossesCpowervaluesthatdonotchange、parallelclipper、Poweramplifiersaretypicallyusedtodrivelowimpedanceloads.（）A对B错、powerlosses、saturation第四章单元测试、selfbiasconfigurationvoltagedividerbiasconfigurationfixedbiasconfiguration第八章单元测试、selfbiasforannchannelJFET、Shockley’sequationdefinesthe（）oftheFETandareunaffectedbythenetworkinwhichthedeviceisemployed.AcharacteristicsBdraincharacteristicsCinput/outputcharacteristicsDtransfercharacteristics、thatarecommononboththeinputs、The（）amplifierhashighinputimpedance，lowoutputimpedance，andlowvoltagegain.AcommongateBcommondrainCcommonsource、The（）FETamplifierhaslowinputimpedance，highoutputimpedance，andhighvoltagegain.AcommongateBcommondrainCcommonsource、Thebandwidthofanamplifieris（）.AtherangeoffrequenciesoverwhichgainremainsrelativelyconstantBtherangeoffrequenciesbetweenthelowerandupperdBfrequenciesCtherangeoffrequenciesfoundusing、Thecharacteristicofanidealdiodearethoseofaswitchthatcanconductcurrent（）.AinbothdirectionsBinonedirectiononlyCinbothdirectionsbutinonlyonedirectionatatimeDdependsonthecircuititisusedin、Thecircuitshownhereisa（）.AseriesclipperBparallelclipperCseriesclamperDshuntclamper、thecollectorsupplyvoltage、Theconditionwhereincreaseinbiascurrentwillnotcausefurtherincreasesincollectorcurrentiscalled（）.AcutoffBsaturationCactiveoperation、Thedifferencebetweentheresultingequationsforanetworkinwhichannpntransistorhasbeenreplacedbyapnptransistoris（）.AthevaluesoftheresistorsBthevalueofβCthesignassociateswiththeparticularquantities、Thefeedbackcircuitconnectionshownhereis（）.AvoltageseriesfeedbackBvoltageshuntfeedbackCcurrentseriesfeedbackDcurrentshuntfeedback、TheFETversionoftheBJT’scommonemitterconfigurationisthe（）circuit.AcommonsourceBcommongateCcommondrainDcommoncurrent、Theinvertingandnoninvertinginputstoanopampareusedtodrivea(n)（）amplifier.AinvertingBnoninvertingCdifferentialDopenloop、ThemaximumtheoreticalefficiencyofanRCcoupledclassAamplifieris（）.A%B%C.%D%、themidpointoftheloadline、Theoperationalamplifierwillonlyslightlyamplifysignals（）.Awhenthesupplyvoltagesaremorethen±VBwhenthesupplyvoltagesarelessthen±VCthatarecommononboththeinputsDthataredifferentonboththeinputs、Theoutputimpedanceofcurrentshuntfeedbackamplifier（）theoutputimpedanceofitsopamp.AisincreasedwhencomparedtoBisdecreasedwhencomparedtoCisreducedbyhalfwhencomparedtoDhasnoeffecton、Theoutputvoltage，VO，isgivenby（）.ABC、Thepowerthatanamplifierdeliverstoaloadisequaltothedifferencebetweenthepowerthatthecircuitdrawsfromthepowersupplyandthepowerthatthecircuitdissipates.（）A对B错、theprimarycomponentsinamplifiers、therangeoffrequenciesoverwhichgainremainsrelativelyconstanttherangeoffrequenciesbetweenthelowerandupperdBfrequenciestherangeoffrequenciesfoundusing第十一章单元测试、TheregionoftheJFETdraincurvethatliesbetweenpinchoffandbreakdowniscalled（）.AtheconstantvoltageregionBtheohmicregionCthesaturationregion、Theresistorvoltageandresistorcurrentinthiscircuitare（）.AV，mABV，mACV，mADV，mA、thesaturationregion、thesignassociateswiththeparticularquantities、Thetermquiescentmeans（）.AmidpointbiasedBatrestCactiveDinactive、Thetransistormodelreplacesthe（）withthejunctiondiode’sacresistance.AcollectorbasejunctionBcollectoremitterjunctionCemitter—basejunction、Thevoltagegainofaverywelldesignedcommoncollectoramplifierconfiguration，usingapnptransistor，is（）.Aabout.Babout.Cintherange.to.Dintherange.to.、TheZenerdiodemustbeoperatedsuchthat（）.ABislessthanthespecifiedCtheappliedvoltageisgreaterthanDAllofthese、Thisgraphicalsolutionrepresents（）.AfixedbiasforannchannelJFETBvoltagedividerbiasforannchannelJFETCselfbiasforannchannelJFET、transfercharacteristics、Underdifferencemodeoperation，thedifferencemodevoltagegainforthiscircuitis（）.ABCD、V，mA、v)、Voltagedividerbiasstabilityis（）.AdependentonalphaBdependentofbetaCdependentonthecollectorresistorDindependentofbeta、voltageshuntfeedback、Whatisthevalueofthevoltagedroppedacrossforwardbiasedsilicondiodesthatareconnectedinparallelwitheachother?（）.A.VBVCVDV、WhenaBJTisbiasedinthecutoffregionthecollectortoemittervoltageistypicallyequalto（）.AtheemittervoltageBVCthecollectorcurrenttimesthecollectorresistorDthecollectorsupplyvoltage、WhenaBJTisoperatingintheactiveregion，thevoltagedropfromthebasetotheemitterisapproximatelyequaltothe（）、Whenadiodeisdopedwitheitherapentavalentoratrivalentimpurityitsresistancewill（）.AincreaseBdecreaseCmaketheresistancestableagainstvariationduetotemperature、WhenagivenopamphasacommonmodeinputofV，theoutputofthedeviceisV.WhenthedevicehasadifferentialinputofmV，theoutputofthedeviceisV.WhatistheCMPRofthedevice?（）ABCD，，、Whenapnjunctionisreversebiased，itsjunctionresistanceis（）.AhighBlowCdeterminedbythecomponentsthatareexternaltothedeviceDconstantlychanging、WhichofthefollowingbiasingcircuitscanbeusedwithEMOSFETs?（）AselfbiasBzerobiasCdrainfeedbackbiasDcurrentsourcebias、Whichofthefollowingcircuitsisusedtoeliminateaportionofasignal?（）.AClipperBDamperCVoltagemultiplierDVoltagedivider、Whichofthefollowingisnotacommonlyusedsemiconductormaterial’?（）AcarbonBleadCsiliconDgermanium、密码保护：模拟电子技术基础（西安邮电大学）、对、对第十三章单元测试、第一章单元测试文章目录[显示]

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